Semiconductor Device Modeling and Simulation Fundamentals

Designing and optimizing modern electronic circuits requires a precise understanding of device behavior before physical fabrication. This course provides the foundational knowledge of semiconductor physics and the mathematical techniques used in Technology Computer-Aided Design (TCAD) tools, enabling you to interpret and apply simulation results effectively. Upon completion, you will possess the theoretical framework necessary to understand how commercial simulation software predicts device performance, bridging the gap between solid-state physics and practical engineering design. What you'll learn: * Understand the fundamental physics of charge carrier transport (drift and diffusion) in semiconductors. * Master the continuity and Poisson equations that form the basis of all modern device modeling. * Apply mathematical techniques to derive compact models for basic diodes and MOSFETs. * Analyze the impact of key physical parameters, such as doping profiles and carrier mobility, on device performance. * Configure the essential parameters for basic simulation environments used in TCAD workflows. * Practice interpreting simulation outputs for crucial performance metrics like I-V characteristics and transient behavior. The course begins with essential solid-state physics concepts and progresses through the derivation of fundamental governing equations, culminating in practical application examples of device simulation workflows and model implementation. This course is designed for absolute beginners in semiconductor engineering or electrical engineering who need a strong theoretical foundation for device modeling. No prior experience with TCAD software is required. Start building your expertise in semiconductor device analysis today.